Dimitris E. Ioannou received his B.Sc. (1974) degree in physics from the University of Thessaloniki, Greece and his MS (1975) and Ph.D. (1978) degrees in solid-state electronics from the University of Manchester Institute of Science and Technology (UMIST), Manchester (UK). He has held positions at UMIST, Middlesex University (London, UK), Democritus University of Thrace (Greece), and University of Maryland (College Park) prior to his current position of professor of electrical and computer engineering at George Mason University (Fairfax, VA). His main contributions include the development of SEM-EBIC techniques for the characterization of electrically active defects and the measurement of the diffusion length; Schottky and Ohmic contact technology for SiC; techniques for the study of deep traps, carrier generation lifetime, interface states of Silicon-on-Insulator (SOI) materials; and the study of the physics and hot carrier reliability of SOI devices, including the discovery of the opposite-channel based carrier-injection and SOI flash memory cell. His current research interests are on performance and reliability issues of SOI CMOS devices and circuits. He has authored or coauthored more than one hundred research papers, and was the advisor of more than twenty (PhD and MS) research students. He has been actively involved with the annual IEEE International SOI Conference for over a decade, first as a member of the technical and the executive committee, and now as the technical program chairman (SOI 2001) and general chairman (SOI 2002).